AP72T03GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP72T03GH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 62 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 82 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO-252

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AP72T03GH Datasheet (PDF)

..1. Size:96K ape
ap72t03gh ap72t03gj.pdf

AP72T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AGSDescriptionGDS TO-252(H)Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design,

0.1. Size:229K ape
ap72t03gh-hf ap72t03gj-hf.pdf

AP72T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AG RoHS Compliant & Halogen-FreeSDescriptionGDAP72T03 series are from Advanced Power innovated design and siliconS TO-252(H)process technology to

6.1. Size:94K ape
ap72t03gp.pdf

AP72T03GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 65AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

6.2. Size:93K ape
ap72t03gi-hf.pdf

AP72T03GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 62AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device

6.3. Size:96K ape
ap72t03gj-hf.pdf

AP72T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AG RoHS Compliant & Halogen-FreeSDescriptionGDS TO-252(H)Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast s

6.4. Size:94K ape
ap72t03gp-hf.pdf

AP72T03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 65AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggediz

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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