Справочник MOSFET. AP72T03GH

 

AP72T03GH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP72T03GH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 62 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 15 nC
   trⓘ - Время нарастания: 82 ns
   Cossⓘ - Выходная емкость: 250 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для AP72T03GH

 

 

AP72T03GH Datasheet (PDF)

 ..1. Size:96K  ape
 ap72t03gh ap72t03gj.pdf

AP72T03GH AP72T03GH

AP72T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AGSDescriptionGDS TO-252(H)Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design,

 0.1. Size:229K  ape
 ap72t03gh-hf ap72t03gj-hf.pdf

AP72T03GH AP72T03GH

AP72T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AG RoHS Compliant & Halogen-FreeSDescriptionGDAP72T03 series are from Advanced Power innovated design and siliconS TO-252(H)process technology to

 6.1. Size:94K  ape
 ap72t03gp.pdf

AP72T03GH AP72T03GH

AP72T03GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 65AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

 6.2. Size:93K  ape
 ap72t03gi-hf.pdf

AP72T03GH AP72T03GH

AP72T03GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 62AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device

 6.3. Size:96K  ape
 ap72t03gj-hf.pdf

AP72T03GH AP72T03GH

AP72T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AG RoHS Compliant & Halogen-FreeSDescriptionGDS TO-252(H)Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast s

 6.4. Size:94K  ape
 ap72t03gp-hf.pdf

AP72T03GH AP72T03GH

AP72T03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 65AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggediz

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History: IRFF9232 | RSQ035P03TR

 

 
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