AP75T10GI-HF Todos los transistores

 

AP75T10GI-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP75T10GI-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO-220CFM
     - Selección de transistores por parámetros

 

AP75T10GI-HF Datasheet (PDF)

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AP75T10GI-HF

AP75T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 12m RoHS Compliant & Halogen-Free ID 42AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-res

 5.1. Size:162K  ape
ap75t10gi.pdf pdf_icon

AP75T10GI-HF

AP75T10GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 12m RoHS Compliant & Halogen-Free ID 42AGSDescriptionAP75T10 series are from Advanced Power innovated design andsilicon process technology to achie

 6.1. Size:225K  ape
ap75t10gs.pdf pdf_icon

AP75T10GI-HF

AP75T10GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower On-resistance RDS(ON) 15m Fast Switching Characteristic ID 65AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized device design, lowDSo

 6.2. Size:200K  ape
ap75t10gp.pdf pdf_icon

AP75T10GI-HF

AP75T10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower On-resistance RDS(ON) 15m Fast Switching Characteristic ID 65AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, rugge

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History: HUFA76423S3ST | P06P03LDG | HM12N20D | FDP52N20 | NCE65TF099F

 

 
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