AP75T10GI-HF. Аналоги и основные параметры

Наименование производителя: AP75T10GI-HF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 44.6 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 42 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 31 ns

Cossⓘ - Выходная емкость: 550 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm

Тип корпуса: TO-220CFM

Аналог (замена) для AP75T10GI-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP75T10GI-HF даташит

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 ap75t10gi-hf.pdf pdf_icon

AP75T10GI-HF

AP75T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 12m RoHS Compliant & Halogen-Free ID 42A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-res

 5.1. Size:162K  ape
 ap75t10gi.pdf pdf_icon

AP75T10GI-HF

AP75T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 12m RoHS Compliant & Halogen-Free ID 42A G S Description AP75T10 series are from Advanced Power innovated design and silicon process technology to achie

 6.1. Size:225K  ape
 ap75t10gs.pdf pdf_icon

AP75T10GI-HF

AP75T10GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower On-resistance RDS(ON) 15m Fast Switching Characteristic ID 65A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, low D S o

 6.2. Size:200K  ape
 ap75t10gp.pdf pdf_icon

AP75T10GI-HF

AP75T10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower On-resistance RDS(ON) 15m Fast Switching Characteristic ID 65A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

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