AP80T10GR-HF Todos los transistores

 

AP80T10GR-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP80T10GR-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 166 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 58 nS
   Cossⓘ - Capacitancia de salida: 550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
   Paquete / Cubierta: TO-262
     - Selección de transistores por parámetros

 

AP80T10GR-HF Datasheet (PDF)

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ap80t10gr-hf.pdf pdf_icon

AP80T10GR-HF

AP80T10GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 85AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggediz

 5.1. Size:193K  ape
ap80t10gr.pdf pdf_icon

AP80T10GR-HF

AP80T10GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 85AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggediz

 6.1. Size:150K  ape
ap80t10gp.pdf pdf_icon

AP80T10GR-HF

AP80T10GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 85AG RoHS Compliant & Halogen-FreeSDescriptionAP80T10 series are from Advanced Power innovate

 6.2. Size:92K  ape
ap80t10gp-hf.pdf pdf_icon

AP80T10GR-HF

AP80T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 85AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Grugg

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History: IXTP50N28T | 3SK249

 

 
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