AP83T02GJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP83T02GJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 84 nS
   Cossⓘ - Capacitancia de salida: 485 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO-251

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AP83T02GJ-HF Datasheet (PDF)

..1. Size:97K ape
ap83t02gh-hf ap83t02gj-hf.pdf

AP83T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 25V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast

8.1. Size:70K ape
ap83t03gh-hf ap83t03gj-hf.pdf

AP83T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP83T03 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the l

8.2. Size:56K ape
ap83t03agh-hf.pdf

AP83T03AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6.5m Fast Switching Characteristic ID 66AG RoHS Compliant & Halogen-FreeSDescriptionAP83T03A series are from Advanced Power innovated design andGDsilicon process technology to achieve the

8.3. Size:99K ape
ap83t03gh j-hf.pdf

AP83T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,S

8.4. Size:166K ape
ap83t03gj.pdf

8.5. Size:118K ape
ap83t03gm-hf.pdf

AP83T03GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 6mD Fast Switching Characteristic ID 16AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP83T03 series are from Advanced Power innovated design andsilicon process technolo

8.6. Size:58K ape
ap83t03gmt-hf.pdf

AP83T03GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 6m Low On-resistance ID 72AG RoHS Compliant & Halogen-FreeSDDDDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggediz

8.7. Size:57K ape
ap83t03agmt-hf.pdf

AP83T03AGMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 6m Low On-resistance ID 71AG RoHS Compliant & Halogen-FreeS DDDDescriptionDAP83T03A series are from Advanced Power innovated design and siliconprocess technology to achieve

8.8. Size:1488K allpower
ap83t03k.pdf

AIIP ERAP83T03K DATA SHEET N-Channel Power MOSFETT l."W On-resistance D BVoss 30V Jimple Drive Requirement 6m0 T Fast Switching Characteristic lo 75A G RHS cmpliant & Halogen-Free T DescriptinAP83T03K series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance T0-252fast switchin

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