AP83T02GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP83T02GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 84 nS

Cossⓘ - Capacitancia de salida: 485 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO-251

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AP83T02GJ-HF datasheet

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 ap83t02gh-hf ap83t02gj-hf.pdf pdf_icon

AP83T02GJ-HF

AP83T02GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 25V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast

 8.1. Size:70K  ape
 ap83t03gh-hf ap83t03gj-hf.pdf pdf_icon

AP83T02GJ-HF

AP83T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP83T03 series are from Advanced Power innovated design and silicon G D process technology to achieve the l

 8.2. Size:56K  ape
 ap83t03agh-hf.pdf pdf_icon

AP83T02GJ-HF

AP83T03AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6.5m Fast Switching Characteristic ID 66A G RoHS Compliant & Halogen-Free S Description AP83T03A series are from Advanced Power innovated design and G D silicon process technology to achieve the

 8.3. Size:99K  ape
 ap83t03gh j-hf.pdf pdf_icon

AP83T02GJ-HF

AP83T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S

MOSTRAR MÁS

Otros transistores... AP75T10GS, AP75T12GI-HF, AP75T12GP-HF, AP78T10GP-HF, AP80N30W, AP80T10GP-HF, AP80T10GR-HF, AP83T02GH-HF, 4N60, AP83T03AGH-HF, AP83T03AGMT-HF, AP83T03GH-HF, AP83T03GJ-HF, AP83T03GM-HF, AP83T03GMT-HF, AP85T03GH, AP85T03GJ