AP83T02GJ-HF. Аналоги и основные параметры
Наименование производителя: AP83T02GJ-HF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 84 ns
Cossⓘ - Выходная емкость: 485 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: TO-251
Аналог (замена) для AP83T02GJ-HF
- подборⓘ MOSFET транзистора по параметрам
AP83T02GJ-HF даташит
ap83t02gh-hf ap83t02gj-hf.pdf
AP83T02GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 25V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast
ap83t03gh-hf ap83t03gj-hf.pdf
AP83T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP83T03 series are from Advanced Power innovated design and silicon G D process technology to achieve the l
ap83t03agh-hf.pdf
AP83T03AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6.5m Fast Switching Characteristic ID 66A G RoHS Compliant & Halogen-Free S Description AP83T03A series are from Advanced Power innovated design and G D silicon process technology to achieve the
ap83t03gh j-hf.pdf
AP83T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S
Другие IGBT... AP75T10GS, AP75T12GI-HF, AP75T12GP-HF, AP78T10GP-HF, AP80N30W, AP80T10GP-HF, AP80T10GR-HF, AP83T02GH-HF, 4N60, AP83T03AGH-HF, AP83T03AGMT-HF, AP83T03GH-HF, AP83T03GJ-HF, AP83T03GM-HF, AP83T03GMT-HF, AP85T03GH, AP85T03GJ
History: SSW65R190S2 | 2SK2834-01 | STB70NFS03L
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