AP85U03GP-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP85U03GP-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 75 nS
   Cossⓘ - Capacitancia de salida: 435 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO-220

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AP85U03GP-HF Datasheet (PDF)

..1. Size:97K ape
ap85u03gp-hf.pdf

AP85U03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized d

6.1. Size:94K ape
ap85u03gmt-hf.pdf

AP85U03GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 5m Low On-resistance ID 82AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

6.2. Size:96K ape
ap85u03gh-hf.pdf

AP85U03GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 5.5m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,

6.3. Size:93K ape
ap85u03gm-hf.pdf

AP85U03GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 5mD Fast Switching Characteristic ID 18.6AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combinatio

6.4. Size:1954K cn vbsemi
ap85u03gh.pdf

AP85U03GHwww.VBsemi.twwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Chan

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