AP90T03GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP90T03GJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 83 nS

Cossⓘ - Capacitancia de salida: 1010 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO-251

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AP90T03GJ datasheet

 ..1. Size:206K  ape
 ap90t03gh ap90t03gj.pdf pdf_icon

AP90T03GJ

AP90T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On- resistance BVDSS 30V D Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description G The TO-252 package is widely preferred for commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage ap

 6.1. Size:124K  ape
 ap90t03gr.pdf pdf_icon

AP90T03GJ

AP90T03GR RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide thede signer with the best combination of fast switching, ruggedized device design, low on-resistance

 6.2. Size:92K  ape
 ap90t03gs-hf.pdf pdf_icon

AP90T03GJ

AP90T03GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 6.3. Size:158K  ape
 ap90t03gs.pdf pdf_icon

AP90T03GJ

AP90T03GS RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, D S TO-263(S)

MOSTRAR MÁS

Otros transistores... AP85U03GP-HF, AP86T02GH-HF, AP86T02GJ-HF, AP86T03GH, AP86T03GJ, AP88N30W, AP90T03GH, AP90T03GI, IRLB3034, AP90T03GR, AP90T03GS-HF, AP90T03P, AP90T06GP-HF, AP9120AGH-HF, AP9120GH-HF, AP9120GJ-HF, AP92T03GH-HF