All MOSFET. AP90T03GJ Datasheet

 

AP90T03GJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP90T03GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 1010 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-251

 AP90T03GJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP90T03GJ Datasheet (PDF)

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 ap90t03gh ap90t03gj.pdf

AP90T03GJ AP90T03GJ

AP90T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On- resistance BVDSS 30VD Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AGSDescriptionGThe TO-252 package is widely preferred for commercial-industrialDSTO-252(H)surface mount applications and suited for low voltage ap

 6.1. Size:124K  ape
 ap90t03gr.pdf

AP90T03GJ AP90T03GJ

AP90T03GRRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide thede signer withthe best combination of fast switching, ruggedized device design,low on-resistance

 6.2. Size:92K  ape
 ap90t03gs-hf.pdf

AP90T03GJ AP90T03GJ

AP90T03GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

 6.3. Size:158K  ape
 ap90t03gs.pdf

AP90T03GJ AP90T03GJ

AP90T03GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized device design,DS TO-263(S)

 6.4. Size:152K  ape
 ap90t03gi.pdf

AP90T03GJ AP90T03GJ

AP90T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 4m Full Isolation Package ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: ECH8308

 

 
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