AP9408CGM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9408CGM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: SO-8

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AP9408CGM-HF datasheet

 ..1. Size:93K  ape
 ap9408cgm-hf.pdf pdf_icon

AP9408CGM-HF

AP9408CGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 8m D Fast Switching Characteristic ID 14A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas

 8.1. Size:94K  ape
 ap9408agm-hf.pdf pdf_icon

AP9408CGM-HF

AP9408AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D Simple Drive Requirement RDS(ON) 10m D D Fast Switching Characteristic ID 12.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 8.2. Size:143K  ape
 ap9408agh.pdf pdf_icon

AP9408CGM-HF

AP9408AGH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 53A G S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) ruggedized device desi

 8.3. Size:99K  ape
 ap9408gh ap9408gj.pdf pdf_icon

AP9408CGM-HF

AP9408GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic G ID 57A S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) ruggedized device desi

MOSTRAR MÁS

Otros transistores... AP9402GMT-HF, AP9402GYT-HF, AP9404GH-HF, AP9404GM-HF, AP9408AGH, AP9408AGI, AP9408AGM-HF, AP9408AGP, 10N60, AP9408GH, AP9408GJ, AP9408GM-HF, AP9410AGH-HF, AP9410AGM-HF, AP9410GH-HF, AP9410GM, AP9410GMT-HF