AP9414GM Todos los transistores

 

AP9414GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9414GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: SO-8
     - Selección de transistores por parámetros

 

AP9414GM Datasheet (PDF)

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ap9414gm.pdf pdf_icon

AP9414GM

AP9414GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 6.5mD Fast Switching Characteristic ID 16AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des

 9.1. Size:229K  ape
ap9410gh.pdf pdf_icon

AP9414GM

AP9410GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP9410 series are from Advanced Power innovated design andGDsilicon process technology to achieve the lowes

 9.2. Size:94K  ape
ap9412agm-hf.pdf pdf_icon

AP9414GM

AP9412AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Ultra_Low On-resistance RDS(ON) 6mDD Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-Free SSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination o

 9.3. Size:200K  ape
ap9418gm.pdf pdf_icon

AP9414GM

AP9418GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35VDD Ultra_Low On-resistance RDS(ON) 4mDD Fast Switching Characteristic ID 24AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SWP055R68E7T | H02N60I | AP9563GK | HM4612 | CHM9424JGP | KPCF8402 | P9515BD

 

 
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