AP9414GM. Аналоги и основные параметры
Наименование производителя: AP9414GM
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 450 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
Тип корпуса: SO-8
Аналог (замена) для AP9414GM
- подборⓘ MOSFET транзистора по параметрам
AP9414GM даташит
..1. Size:96K ape
ap9414gm.pdf 

AP9414GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 6.5m D Fast Switching Characteristic ID 16A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des
9.1. Size:229K ape
ap9410gh.pdf 

AP9410GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP9410 series are from Advanced Power innovated design and G D silicon process technology to achieve the lowes
9.2. Size:94K ape
ap9412agm-hf.pdf 

AP9412AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 6m D D Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o
9.3. Size:200K ape
ap9418gm.pdf 

AP9418GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35V D D Ultra_Low On-resistance RDS(ON) 4m D D Fast Switching Characteristic ID 24A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device
9.4. Size:166K ape
ap9410agm.pdf 

AP9410AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 5.5m D D Fast Switching Characteristic ID 18A G RoHS Compliant & Halogen-Free S S S SO-8 D Description AP9410A series are from
9.5. Size:64K ape
ap9412gh ap9412gj.pdf 

AP9412GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 73A G S Description The Advanced Power MOSFETs from APEC provide the designer with G D S the best combination of fast switching, ruggedized device design, low
9.6. Size:94K ape
ap9412gp.pdf 

AP9412GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 73A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
9.7. Size:58K ape
ap9410gmt-hf.pdf 

AP9410GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive D BVDSS 30V Simple Drive Requirement RDS(ON) 5.5m SO-8 Compatible ID 80A G Low On-resistance S RoHS Compliant & Halogen-Free D D D D Description Advanced Power MOSFETs from APEC provide the designer with the best combina
9.8. Size:93K ape
ap9412cgm-hf.pdf 

AP9412CGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 4.8m D Fast Switching Characteristic ID 18.2A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combinat
9.9. Size:96K ape
ap9410gm-hf.pdf 

AP9410GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 6m D D Fast Switching ID 18A G S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-
9.10. Size:61K ape
ap9412agp.pdf 

AP9412AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an
9.11. Size:224K ape
ap9416gm.pdf 

AP9416GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 3.2m D D Fast Switching Characteristic ID 25A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devi
9.12. Size:118K ape
ap9412agi.pdf 

AP9412AGI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 6m Full Isolation Package ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
9.13. Size:165K ape
ap9412agh.pdf 

AP9412AGH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with G D S the best combination of fast switching, ruggedized device design, TO-252(H
9.14. Size:70K ape
ap9410gm.pdf 

AP9410GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 6m D D Fast Switching ID 18A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
9.15. Size:94K ape
ap9410gh-hf.pdf 

AP9410GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching, ruggedi
9.16. Size:118K ape
ap9412gi.pdf 

AP9412GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 6m Full Isolation Package ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
9.17. Size:93K ape
ap9412agm.pdf 

AP9412AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 6m D D Fast Switching Characteristic ID 16A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic
9.18. Size:95K ape
ap9410agh-hf.pdf 

AP9410AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 67A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching, rugged
9.19. Size:57K ape
ap9410agm-hf.pdf 

AP9410AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 5.5m D D Fast Switching Characteristic ID 18A G RoHS Compliant & Halogen-Free S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
9.20. Size:183K ape
ap9410agh.pdf 

AP9410AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 67A G RoHS Compliant & Halogen-Free S Description AP9410A series are from Advanced Power innovated d
9.21. Size:93K ape
ap9412bgm-hf.pdf 

AP9412BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 6m D Fast Switching Characteristic ID 18A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas
9.22. Size:93K ape
ap9412bgm.pdf 

AP9412BGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 6m D Fast Switching Characteristic ID 18A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig
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