AP9416GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9416GM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 3.6 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 8 nS
Cossⓘ - Capacitancia de salida: 780 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de AP9416GM MOSFET
- Selecciónⓘ de transistores por parámetros
AP9416GM datasheet
..1. Size:224K ape
ap9416gm.pdf 
AP9416GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 3.2m D D Fast Switching Characteristic ID 25A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devi
9.1. Size:229K ape
ap9410gh.pdf
AP9410GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP9410 series are from Advanced Power innovated design and G D silicon process technology to achieve the lowes
9.2. Size:94K ape
ap9412agm-hf.pdf
AP9412AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 6m D D Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o
9.3. Size:200K ape
ap9418gm.pdf
AP9418GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35V D D Ultra_Low On-resistance RDS(ON) 4m D D Fast Switching Characteristic ID 24A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device
9.4. Size:166K ape
ap9410agm.pdf
AP9410AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 5.5m D D Fast Switching Characteristic ID 18A G RoHS Compliant & Halogen-Free S S S SO-8 D Description AP9410A series are from
9.5. Size:64K ape
ap9412gh ap9412gj.pdf
AP9412GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 73A G S Description The Advanced Power MOSFETs from APEC provide the designer with G D S the best combination of fast switching, ruggedized device design, low
9.6. Size:94K ape
ap9412gp.pdf
AP9412GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 73A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
9.7. Size:96K ape
ap9414gm.pdf
AP9414GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 6.5m D Fast Switching Characteristic ID 16A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des
9.8. Size:58K ape
ap9410gmt-hf.pdf
AP9410GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive D BVDSS 30V Simple Drive Requirement RDS(ON) 5.5m SO-8 Compatible ID 80A G Low On-resistance S RoHS Compliant & Halogen-Free D D D D Description Advanced Power MOSFETs from APEC provide the designer with the best combina
9.9. Size:93K ape
ap9412cgm-hf.pdf
AP9412CGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 4.8m D Fast Switching Characteristic ID 18.2A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combinat
9.10. Size:96K ape
ap9410gm-hf.pdf
AP9410GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 6m D D Fast Switching ID 18A G S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-
9.11. Size:61K ape
ap9412agp.pdf
AP9412AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an
9.12. Size:118K ape
ap9412agi.pdf
AP9412AGI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 6m Full Isolation Package ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
9.13. Size:165K ape
ap9412agh.pdf
AP9412AGH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with G D S the best combination of fast switching, ruggedized device design, TO-252(H
9.14. Size:70K ape
ap9410gm.pdf
AP9410GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 6m D D Fast Switching ID 18A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
9.15. Size:94K ape
ap9410gh-hf.pdf
AP9410GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching, ruggedi
9.16. Size:118K ape
ap9412gi.pdf
AP9412GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 6m Full Isolation Package ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
9.17. Size:93K ape
ap9412agm.pdf
AP9412AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 6m D D Fast Switching Characteristic ID 16A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic
9.18. Size:95K ape
ap9410agh-hf.pdf
AP9410AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 67A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching, rugged
9.19. Size:57K ape
ap9410agm-hf.pdf
AP9410AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 5.5m D D Fast Switching Characteristic ID 18A G RoHS Compliant & Halogen-Free S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
9.20. Size:183K ape
ap9410agh.pdf
AP9410AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 67A G RoHS Compliant & Halogen-Free S Description AP9410A series are from Advanced Power innovated d
9.21. Size:93K ape
ap9412bgm-hf.pdf
AP9412BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 6m D Fast Switching Characteristic ID 18A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas
9.22. Size:93K ape
ap9412bgm.pdf
AP9412BGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 6m D Fast Switching Characteristic ID 18A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig
Otros transistores... AP9412AGP, AP9412BGM-HF, AP9412CGM-HF, AP9412GH, AP9412GI, AP9412GJ, AP9412GP, AP9414GM, 4435, AP9418GM, AP9420GM-HF, AP9424GYT-HF, AP9430AGYT-HF, AP9430GH-HF, AP9430GYT-HF, AP9431GH-HF, AP9432GYT-HF
