AP9430GYT-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9430GYT-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 33 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: PMPAK3X3

Búsqueda de reemplazo de MOSFET AP9430GYT-HF

AP9430GYT-HF Datasheet (PDF)

..1. Size:95K ape
ap9430gyt-hf.pdf

AP9430GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 4.5m RoHS Compliant & Halogen-Free ID 23AGSDDDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desig

7.1. Size:94K ape
ap9430gh-hf.pdf

AP9430GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, DS

8.1. Size:97K ape
ap9430agyt-hf.pdf

AP9430AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Small Size & Lower Profile RDS(ON) 4.5m RoHS Compliant & Halogen-Free ID 21AGSDDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desig

9.1. Size:96K ape
ap9434gm-hf.pdf

AP9434GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VDDD Lower Gate Charge RDS(ON) 22.5mD Fast Switching Characteristic ID 8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9434 series are from Advanced Power innovated design and siliconprocess technol

9.2. Size:169K ape
ap9435gm-hf.pdf

AP9435GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low Gate Charge RDS(ON) 50mD Fast Switching ID -5.3AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized devic

9.3. Size:98K ape
ap9435gh ap9435gj.pdf

AP9435GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 20AGSDescriptionGDAdvanced Power MOSFETs utilized advanced processing techniques to S TO-252(H)achieve the lowest possible on-resistance, extremely efficient and cost-

9.4. Size:95K ape
ap9435gp-hf.pdf

AP9435GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID - 15AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, ruggedized

9.5. Size:177K ape
ap9435gm.pdf

AP9435GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low Gate Charge RDS(ON) 50mD Fast Switching ID -5.3AGSSSSO-8DescriptionDThe Advanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowon

9.6. Size:167K ape
ap9434gm.pdf

AP9434GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VDDD Lower Gate Charge RDS(ON) 22.5mD Fast Switching Characteristic ID 8AGS RoHS Compliant & Halogen-Free SSSO-8DDescriptionAP9434 series are from

9.7. Size:95K ape
ap9435gk-hf.pdf

AP9435GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID -6ASD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switchi

9.8. Size:94K ape
ap9435gp.pdf

AP9435GPRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 15AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effecti

9.9. Size:99K ape
ap9435gj-hf.pdf

AP9435GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID - 20AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques to GDS TO-252(H)achieve the lowest poss

9.10. Size:94K ape
ap9431gh-hf.pdf

AP9431GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 55V Simple Drive Requirement RDS(ON) 24m Fast Switching Characteristic ID 23.5AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

9.11. Size:96K ape
ap9432gyt-hf.pdf

AP9432GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 14AGSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desig

9.12. Size:57K ape
ap9435gg-hf.pdf

AP9435GG-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Fast Switching Characteristic RDS(ON) 50m Single Drive Requirement ID - 4.2AG RoHS Compliant & Halogen-FreeSDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge

9.13. Size:2952K cn vbsemi
ap9435gk.pdf

AP9435GKwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Load

9.14. Size:850K cn vbsemi
ap9435k.pdf

AP9435Kwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Load S

9.15. Size:805K cn vbsemi
ap9435gm.pdf

AP9435GMwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop

9.16. Size:833K cn vbsemi
ap9435gg.pdf

AP9435GGwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABS

9.17. Size:880K cn vbsemi
ap9435gh.pdf

AP9435GHwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop ViewP-Ch

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