AP9435GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9435GP
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 12.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 46 nS
Cossⓘ - Capacitancia de salida: 80 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de AP9435GP MOSFET
AP9435GP Datasheet (PDF)
ap9435gp.pdf

AP9435GPRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 15AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effecti
ap9435gp-hf.pdf

AP9435GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID - 15AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, ruggedized
ap9435gm-hf.pdf

AP9435GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low Gate Charge RDS(ON) 50mD Fast Switching ID -5.3AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized devic
ap9435gh ap9435gj.pdf

AP9435GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 20AGSDescriptionGDAdvanced Power MOSFETs utilized advanced processing techniques to S TO-252(H)achieve the lowest possible on-resistance, extremely efficient and cost-
Otros transistores... AP9431GH-HF , AP9432GYT-HF , AP9434GM-HF , AP9435GG-HF , AP9435GH , AP9435GJ , AP9435GK-HF , AP9435GM-HF , 18N50 , AP9440GYT-HF , AP9450GYT-HF , AP9451GG-HF , AP9452AGG-HF , AP9452GG-HF , AP9465AGH , AP9465AGJ , AP9465BGH .
History: AP9440GYT-HF | MSK4D5N60F | MSK7D5N60T | IPA65R660CFD | P0403BVG | MSK1N3 | SWP8N65D
History: AP9440GYT-HF | MSK4D5N60F | MSK7D5N60T | IPA65R660CFD | P0403BVG | MSK1N3 | SWP8N65D



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