AP9469GH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9469GH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 26 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: TO-252

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AP9469GH datasheet

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ap9469gh ap9469gj.pdf pdf_icon

AP9469GH

AP9469GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 40V D Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 18A G RoHS Compliant S Description G The TO-252 package is universally preferred for all commercial- D S TO-252(H) industrial surface mount applications an

 7.1. Size:94K  ape
ap9469gm.pdf pdf_icon

AP9469GH

AP9469GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 40V D D D Fast Switching Characteristic RDS(ON) 50m D RoHS Compliant ID 5.5A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device d

 9.1. Size:234K  ape
ap9467agh.pdf pdf_icon

AP9469GH

AP9467AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 11.5m Fast Switching Characteristic ID 43A G Halogen Free & RoHS Compliant S Description AP9467A series are from Advanced Power innovated design and G D silicon process technology to achieve the

 9.2. Size:142K  ape
ap9467gs.pdf pdf_icon

AP9469GH

AP9467GS RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Single Drive Requirement RDS(ON) 11m Fast Switching Characteristics ID 52A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-resista

Otros transistores... AP9466GM, AP9466GS, AP9468GH-HF, AP9468GJ-HF, AP9468GJ, AP9468GM, AP9468GP-HF, AP9468GS-HF, 8N60, AP9469GJ, AP9469GM, AP9470GM-HF, AP9474GM, AP9475GM-HF, AP9476GM-HF, AP9477GK-HF, AP9477GM-HF