AP9469GH Todos los transistores

 

AP9469GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9469GH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 26 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

AP9469GH Datasheet (PDF)

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AP9469GH

AP9469GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 40VD Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 18AG RoHS CompliantSDescriptionGThe TO-252 package is universally preferred for all commercial- DSTO-252(H)industrial surface mount applications an

 7.1. Size:94K  ape
ap9469gm.pdf pdf_icon

AP9469GH

AP9469GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 40VDDD Fast Switching Characteristic RDS(ON) 50mD RoHS Compliant ID 5.5AGSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device d

 9.1. Size:234K  ape
ap9467agh.pdf pdf_icon

AP9469GH

AP9467AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 11.5m Fast Switching Characteristic ID 43AG Halogen Free & RoHS CompliantSDescriptionAP9467A series are from Advanced Power innovated design andGDsilicon process technology to achieve the

 9.2. Size:142K  ape
ap9467gs.pdf pdf_icon

AP9469GH

AP9467GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Single Drive Requirement RDS(ON) 11m Fast Switching Characteristics ID 52AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-resista

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History: PMV30XPEA | IRL3402S | 4812 | TSM4N80CZ | HFS13N50U | IRFS640B | JFFM13N65D

 

 
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