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AP9474GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9474GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
   Paquete / Cubierta: SO-8
     - Selección de transistores por parámetros

 

AP9474GM Datasheet (PDF)

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ap9474gm.pdf pdf_icon

AP9474GM

AP9474GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VDD Single Drive Requirement D RDS(ON) 10.5mD Surface Mount Package ID 12.8AGSSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design

 ..2. Size:812K  cn vbsemi
ap9474gm.pdf pdf_icon

AP9474GM

AP9474GMwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.012 at VGS = 10 V 12.660 10.5 nC Optimized for Low Side Synchronous0.015 at VGS = 4.5 V 11.6Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CC

 0.1. Size:93K  ape
ap9474gm-hf.pdf pdf_icon

AP9474GM

AP9474GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VDDD Single Drive Requirement RDS(ON) 10.5mD Surface Mount Package ID 12.8AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast sw

 9.1. Size:94K  ape
ap9475gm-hf.pdf pdf_icon

AP9474GM

AP9475GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID 6.9AGSS RoHS Compliant & Halogen-FreeSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fa

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