AP9477GK-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9477GK-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 6.5 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SOT-223

Búsqueda de reemplazo de MOSFET AP9477GK-HF

AP9477GK-HF Datasheet (PDF)

..1. Size:126K ape
ap9477gk-hf.pdf

AP9477GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switch

7.1. Size:69K ape
ap9477gm.pdf

AP9477GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS 60V DDLower Gate Charge RDS(ON) 90m DDFast Switching Characteristic ID 4A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best co

7.2. Size:97K ape
ap9477gm-hf.pdf

AP9477GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDD Lower Gate Charge RDS(ON) 90mDD Fast Switching Characteristic ID 4AG RoHS Compliant SSSO-8 SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg

9.1. Size:94K ape
ap9475gm-hf.pdf

AP9475GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID 6.9AGSS RoHS Compliant & Halogen-FreeSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fa

9.2. Size:217K ape
ap9476gm.pdf

AP9476GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VDD Simple Drive Requirement RDS(ON) 21mDD Fast Switching Characteristic ID 7.8AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi

9.3. Size:93K ape
ap9474gm-hf.pdf

AP9474GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VDDD Single Drive Requirement RDS(ON) 10.5mD Surface Mount Package ID 12.8AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast sw

9.4. Size:98K ape
ap9479gm-hf.pdf

AP9479GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDD Lower Gate Charge RDS(ON) 45mDD Fast Switching Characteristic ID 5.6AG RoHS CompliantSSSO-8SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

9.5. Size:166K ape
ap9470gm.pdf

AP9470GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 13.5mD Fast Switching Characteristic ID 10.2AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9470 series are fro

9.6. Size:93K ape
ap9470gm-hf.pdf

AP9470GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 13.5mD Fast Switching Characteristic ID 10.2AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o

9.7. Size:171K ape
ap9479gm.pdf

AP9479GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS 60V Simple Drive Requirement DD RDS(ON) 45m Lower Gate Charge DD ID 5.6A Fast Switching Characteristic G RoHS Compliant & Halogen-FreeSSSO-8SDescriptionDAP9479 series are fro

9.8. Size:94K ape
ap9476gm-hf.pdf

AP9476GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VDD Simple Drive Requirement RDS(ON) 21mDD Fast Switching Characteristic ID 7.8AG RoHS Compliant & Halogen-Free SSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fas

9.9. Size:169K ape
ap9475gm.pdf

AP9475GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID 6.9AGSS RoHS Compliant & Halogen-FreeSSO-8DescriptionDAP9475 series are from A

9.10. Size:94K ape
ap9478gm.pdf

AP9478GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDD Lower Gate Charge RDS(ON) 64mDD Fast Switching Characteristic ID 4.8AG RoHS CompliantSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchin

9.11. Size:92K ape
ap9474gm.pdf

AP9474GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VDD Single Drive Requirement D RDS(ON) 10.5mD Surface Mount Package ID 12.8AGSSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design

9.12. Size:812K cn vbsemi
ap9474gm.pdf

AP9474GMwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.012 at VGS = 10 V 12.660 10.5 nC Optimized for Low Side Synchronous0.015 at VGS = 4.5 V 11.6Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CC

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