AP9561AGM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9561AGM-HF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 370 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: SO-8
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AP9561AGM-HF Datasheet (PDF)
ap9561agm-hf.pdf
AP9561AGM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDDD Low On-resistance RDS(ON) 18m Fast Switching Characteristic ID -9.2AGS RoHS Compliant & Halogen-FreeSSO-8 SDDescriptionAP9561A series are from Advanced Power innovated design and siliconprocess technol
ap9561agi-hf.pdf
AP9561AGI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 18m Fast Switching Characteristic ID -30AG RoHS Compliant & Halogen-FreeSDescriptionAP9561A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
ap9561agh-hf.pdf
AP9561AGH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 18m Fast Switching Characteristic ID -39AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast switching, rugge
ap9561agj-hf.pdf
AP9561AGJ-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 18m Fast Switching Characteristic ID -39AG RoHS Compliant & Halogen-FreeSDescriptionAP9561A series are from Advanced Power innovated design and silicon GDTO-251(J)Sprocess technology t
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918