AP9561GP-HF Todos los transistores

 

AP9561GP-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9561GP-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO-220
 

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AP9561GP-HF Datasheet (PDF)

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 ap9561gp-hf.pdf pdf_icon

AP9561GP-HF

AP9561GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des

 7.1. Size:201K  ape
 ap9561gj.pdf pdf_icon

AP9561GP-HF

AP9561GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAP9561 series are from Advanced Power innovated design and siliconGDprocess technology to achieve th

 7.2. Size:93K  ape
 ap9561gm-hf.pdf pdf_icon

AP9561GP-HF

AP9561GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 18mD Fast Switching Characteristic ID -9.4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

 7.3. Size:216K  ape
 ap9561gm.pdf pdf_icon

AP9561GP-HF

AP9561GMRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 18mD Fast Switching Characteristic ID -9.4AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device des

MOSTRAR MÁS

Otros transistores... AP9561AGH-HF , AP9561AGI-HF , AP9561AGJ-HF , AP9561AGM-HF , AP9561GH-HF , AP9561GI-HF , AP9561GJ-HF , AP9561GM , IRF540N , AP9562GP-HF , AP9563GH-HF , AP9563GJ-HF , AP9563GK , AP9563GM-HF , AP9564GM , 2SK4057 , 2SK3296 .

History: PSMN4R0-30YL | HGP020NE4S | VBMB18R15S | AP9510GM | AP94T07GS-HF | STP45N10F7 | OSG55R580DEF

 

 
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