AP9563GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9563GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SO-8

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AP9563GM-HF datasheet

 ..1. Size:57K  ape
 ap9563gm-hf.pdf pdf_icon

AP9563GM-HF

AP9563GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID -6A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa

 6.1. Size:178K  ape
 ap9563gm.pdf pdf_icon

AP9563GM-HF

AP9563GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID -6A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP9563 series are from Advanced Power innovated design and silicon process technology

 7.1. Size:99K  ape
 ap9563gh-hf ap9563gj-hf.pdf pdf_icon

AP9563GM-HF

AP9563GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, r

 7.2. Size:235K  ape
 ap9563gh.pdf pdf_icon

AP9563GM-HF

AP9563GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, r

MOSTRAR MÁS

Otros transistores... AP9561GI-HF, AP9561GJ-HF, AP9561GM, AP9561GP-HF, AP9562GP-HF, AP9563GH-HF, AP9563GJ-HF, AP9563GK, IRF640, AP9564GM, 2SK4057, 2SK3296, 2SK3296-S, 2SK3296-ZK, 2SK3296-ZJ, AP9565AGH, AP9565AGJ