AP9563GM-HF Todos los transistores

 

AP9563GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9563GM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: SO-8
 

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AP9563GM-HF Datasheet (PDF)

 ..1. Size:57K  ape
 ap9563gm-hf.pdf pdf_icon

AP9563GM-HF

AP9563GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID -6AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

 6.1. Size:178K  ape
 ap9563gm.pdf pdf_icon

AP9563GM-HF

AP9563GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID -6AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9563 series are from Advanced Power innovated designand silicon process technology

 7.1. Size:99K  ape
 ap9563gh-hf ap9563gj-hf.pdf pdf_icon

AP9563GM-HF

AP9563GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,r

 7.2. Size:235K  ape
 ap9563gh.pdf pdf_icon

AP9563GM-HF

AP9563GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,r

MOSTRAR MÁS

Otros transistores... AP9561GI-HF , AP9561GJ-HF , AP9561GM , AP9561GP-HF , AP9562GP-HF , AP9563GH-HF , AP9563GJ-HF , AP9563GK , IRFZ44 , AP9564GM , 2SK4057 , 2SK3296 , 2SK3296-S , 2SK3296-ZK , 2SK3296-ZJ , AP9565AGH , AP9565AGJ .

History: BUK9E8R5-40E | AUIRF3315S

 

 
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