Справочник MOSFET. AP9563GM-HF

 

AP9563GM-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP9563GM-HF
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 16 nC
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для AP9563GM-HF

 

 

AP9563GM-HF Datasheet (PDF)

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 ap9563gm-hf.pdf

AP9563GM-HF AP9563GM-HF

AP9563GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID -6AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

 6.1. Size:178K  ape
 ap9563gm.pdf

AP9563GM-HF AP9563GM-HF

AP9563GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID -6AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9563 series are from Advanced Power innovated designand silicon process technology

 7.1. Size:99K  ape
 ap9563gh-hf ap9563gj-hf.pdf

AP9563GM-HF AP9563GM-HF

AP9563GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,r

 7.2. Size:235K  ape
 ap9563gh.pdf

AP9563GM-HF AP9563GM-HF

AP9563GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,r

 7.3. Size:96K  ape
 ap9563gk.pdf

AP9563GM-HF AP9563GM-HF

AP9563GKRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Lower Gate Charge RDS(ON) 40mS Fast Switching Characteristic ID -6.8ADGSOT-223DDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistance and cost-G

 7.4. Size:186K  ape
 ap9563gj.pdf

AP9563GM-HF AP9563GM-HF

AP9563GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,r

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