2SK4057 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK4057
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 19 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.3 nS
Cossⓘ - Capacitancia de salida: 210 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
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2SK4057 datasheet
2sk4057.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 15.0 m
2sk4057.pdf
isc N-Channel MOSFET Transistor 2SK4057 FEATURES Drain Current I = 53A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 0.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
2sk4057-s27-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk4059tv.pdf
2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit mm Application for Ultra-compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Stora
Otros transistores... AP9561GM, AP9561GP-HF, AP9562GP-HF, AP9563GH-HF, AP9563GJ-HF, AP9563GK, AP9563GM-HF, AP9564GM, IRLZ44N, 2SK3296, 2SK3296-S, 2SK3296-ZK, 2SK3296-ZJ, AP9565AGH, AP9565AGJ, AP9565BGH-HF, AP9565BGJ-HF
History: CS2110K1
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