2SK4057. Аналоги и основные параметры
Наименование производителя: 2SK4057
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 19 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 3.3 ns
Cossⓘ - Выходная емкость: 210 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Аналог (замена) для 2SK4057
- подборⓘ MOSFET транзистора по параметрам
2SK4057 даташит
2sk4057.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 15.0 m
2sk4057.pdf
isc N-Channel MOSFET Transistor 2SK4057 FEATURES Drain Current I = 53A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 0.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
2sk4057-s27-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk4059tv.pdf
2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit mm Application for Ultra-compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Stora
Другие IGBT... AP9561GM, AP9561GP-HF, AP9562GP-HF, AP9563GH-HF, AP9563GJ-HF, AP9563GK, AP9563GM-HF, AP9564GM, IRLZ44N, 2SK3296, 2SK3296-S, 2SK3296-ZK, 2SK3296-ZJ, AP9565AGH, AP9565AGJ, AP9565BGH-HF, AP9565BGJ-HF
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Список транзисторов
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