AP9566GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9566GM
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 5 nS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de AP9566GM MOSFET
- Selecciónⓘ de transistores por parámetros
AP9566GM datasheet
..1. Size:100K ape
ap9566gm.pdf 
AP9566GM RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 72m D Fast Switching Characteristic ID -4.5A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des
0.1. Size:93K ape
ap9566gm-hf.pdf
AP9566GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 72m D Fast Switching Characteristic ID -4.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of
7.1. Size:166K ape
ap9566gh.pdf
AP9566GH RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 65m Fast Switching Characteristic ID -13.6A G S Description G Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized device design
9.1. Size:99K ape
ap9563gh-hf ap9563gj-hf.pdf
AP9563GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, r
9.2. Size:235K ape
ap9563gh.pdf
AP9563GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, r
9.3. Size:93K ape
ap9561gp-hf.pdf
AP9561GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des
9.4. Size:93K ape
ap9562gp-hf.pdf
AP9562GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 32m Fast Switching Characteristic ID -27A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des
9.5. Size:237K ape
ap9567gh.pdf
AP9567GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID -22A G RoHS Compliant & Halogen-Free S Description G AP9567 series are from Advanced Power innovated design and silicon D S process technology to achieve
9.6. Size:237K ape
ap9567gh-hf ap9567gj-hf.pdf
AP9567GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID -22A G RoHS Compliant & Halogen-Free S Description G AP9567 series are from Advanced Power innovated design and silicon D S process technology to achieve
9.7. Size:63K ape
ap9569gh-hf ap9569gj-hf.pdf
AP9569GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -40V Fast Switching Characteristic RDS(ON) 90m RoHS Compliant & Halogen-Free ID -14A G S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for
9.8. Size:178K ape
ap9563gm.pdf
AP9563GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID -6A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP9563 series are from Advanced Power innovated design and silicon process technology
9.9. Size:57K ape
ap9563gm-hf.pdf
AP9563GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID -6A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
9.10. Size:95K ape
ap9564gm.pdf
AP9564GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Low On-resistance RDS(ON) 28m D Fast Switching Characteristic ID -7.3A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device d
9.11. Size:89K ape
ap9565gem.pdf
AP9565GEM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Fast Switching Characteristic RDS(ON) 38m D RoHS Compliant ID -6.5A G S S S SO-8 D Description G The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized de
9.12. Size:101K ape
ap9567gh-hf.pdf
AP9567GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID -22A G RoHS Compliant & Halogen-Free S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount a
9.13. Size:57K ape
ap9561agi-hf.pdf
AP9561AGI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 18m Fast Switching Characteristic ID -30A G RoHS Compliant & Halogen-Free S Description AP9561A series are from Advanced Power innovated design and silicon process technology to achieve the lowest
9.14. Size:201K ape
ap9561gj.pdf
AP9561GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description AP9561 series are from Advanced Power innovated design and silicon G D process technology to achieve th
9.15. Size:92K ape
ap9560gh-hf.pdf
AP9560GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID -52A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, TO-
9.16. Size:96K ape
ap9563gk.pdf
AP9563GK RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D Lower Gate Charge RDS(ON) 40m S Fast Switching Characteristic ID -6.8A D G SOT-223 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost- G
9.17. Size:98K ape
ap9565agh-hf ap9565agj-hf.pdf
AP9565AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 42m Fast Switching Characteristic ID -18.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switchi
9.18. Size:56K ape
ap9561agm-hf.pdf
AP9561AGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D D Low On-resistance RDS(ON) 18m Fast Switching Characteristic ID -9.2A G S RoHS Compliant & Halogen-Free S SO-8 S D Description AP9561A series are from Advanced Power innovated design and silicon process technol
9.19. Size:93K ape
ap9561gm-hf.pdf
AP9561GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 18m D Fast Switching Characteristic ID -9.4A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of
9.20. Size:216K ape
ap9561gm.pdf
AP9561GM RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 18m D Fast Switching Characteristic ID -9.4A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des
9.21. Size:96K ape
ap9565bgh-hf ap9565bgj-hf.pdf
AP9565BGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D S best combination of fast switching,
9.22. Size:93K ape
ap9561gi-hf.pdf
AP9561GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -36A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz
9.23. Size:59K ape
ap9569gm.pdf
AP9569GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D Fast Switching Characteristic D RDS(ON) 90m D RoHS Compliant ID -4.2A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device
9.24. Size:59K ape
ap9560gs-hf.pdf
AP9560GS-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 12.5m Fast Switching Characteristic ID -51A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi
9.25. Size:96K ape
ap9561gh-hf ap9561gj-hf.pdf
AP9561GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,
9.26. Size:57K ape
ap9561agh-hf.pdf
AP9561AGH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 18m Fast Switching Characteristic ID -39A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, rugge
9.27. Size:73K ape
ap9565bgm-hf-pre.pdf
AP9565BGM-HF Preliminary Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 52m D Fast Switching Characteristic ID -5.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast swi
9.28. Size:95K ape
ap9564gm-hf.pdf
AP9564GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Low On-resistance RDS(ON) 28m D Fast Switching Characteristic ID -7.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of
9.29. Size:70K ape
ap9567gm.pdf
AP9567GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D Low On-resistance D RDS(ON) 50m D Fast Switching Characteristic ID -6A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best c
9.30. Size:186K ape
ap9563gj.pdf
AP9563GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, r
9.31. Size:131K ape
ap9565geh ap9565gej.pdf
AP9565GEH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D Lower On-resistance RDS(ON) 38m G Fast Switching Characteristic ID -24A S Description G D Advanced Power MOSFETs from APEC provide the S TO-252(H) designer with the best combination of fast switching, ruggedized device de
9.32. Size:98K ape
ap9565bgh j-hf.pdf
AP9565BGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D S best combination of fast switching
9.33. Size:57K ape
ap9561agj-hf.pdf
AP9561AGJ-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 18m Fast Switching Characteristic ID -39A G RoHS Compliant & Halogen-Free S Description AP9561A series are from Advanced Power innovated design and silicon G D TO-251(J) S process technology t
9.34. Size:93K ape
ap9560gp-hf.pdf
AP9560GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 12.5m Fast Switching Characteristic ID -51A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO
9.35. Size:97K ape
ap9565agh ap9565agj.pdf
AP9565AGH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 42m Fast Switching Characteristic ID -18.5A G S Description G Advanced Power MOSFETs from APEC provide the D S designer with the best combination of fast switching, TO-252(H) ruggedized device de
9.37. Size:827K cn vbsemi
ap9564gm.pdf
AP9564GM www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD 1
9.38. Size:827K cn vbsemi
ap9563m.pdf
AP9563M www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD 1 8
Otros transistores... AP9565AGJ, AP9565BGH-HF, AP9565BGJ-HF, AP9565BGM-HF, AP9565GEH, AP9565GEJ, AP9565GEM, AP9566GH, IRFP250N, AP9567GH-HF, AP9567GJ-HF, AP9567GM, AP9569GH-HF, AP9569GJ-HF, AP9569GM, AP9571GP-HF, AP9571GS-HF
