AP9566GM Todos los transistores

 

AP9566GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9566GM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
   Paquete / Cubierta: SO-8
     - Selección de transistores por parámetros

 

AP9566GM Datasheet (PDF)

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ap9566gm.pdf pdf_icon

AP9566GM

AP9566GMRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 72mD Fast Switching Characteristic ID -4.5AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device des

 0.1. Size:93K  ape
ap9566gm-hf.pdf pdf_icon

AP9566GM

AP9566GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 72mD Fast Switching Characteristic ID -4.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

 7.1. Size:166K  ape
ap9566gh.pdf pdf_icon

AP9566GM

AP9566GHRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 65m Fast Switching Characteristic ID -13.6AGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with DSTO-252(H)the best combination of fast switching, ruggedized device design

 9.1. Size:99K  ape
ap9563gh-hf ap9563gj-hf.pdf pdf_icon

AP9566GM

AP9563GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26AG RoHS CompliantSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,r

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History: BUK9225-55A | IRF7316QPBF | FQU1N50TU | SWHA15N04V | SE12N65 | IPA65R280E6 | BSD235N

 

 
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