AP9567GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9567GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: TO-251

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AP9567GJ-HF datasheet

 ..1. Size:237K  ape
 ap9567gh-hf ap9567gj-hf.pdf pdf_icon

AP9567GJ-HF

AP9567GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID -22A G RoHS Compliant & Halogen-Free S Description G AP9567 series are from Advanced Power innovated design and silicon D S process technology to achieve

 7.1. Size:237K  ape
 ap9567gh.pdf pdf_icon

AP9567GJ-HF

AP9567GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID -22A G RoHS Compliant & Halogen-Free S Description G AP9567 series are from Advanced Power innovated design and silicon D S process technology to achieve

 7.2. Size:101K  ape
 ap9567gh-hf.pdf pdf_icon

AP9567GJ-HF

AP9567GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID -22A G RoHS Compliant & Halogen-Free S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount a

 7.3. Size:70K  ape
 ap9567gm.pdf pdf_icon

AP9567GJ-HF

AP9567GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D Low On-resistance D RDS(ON) 50m D Fast Switching Characteristic ID -6A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best c

MOSTRAR MÁS

Otros transistores... AP9565BGJ-HF, AP9565BGM-HF, AP9565GEH, AP9565GEJ, AP9565GEM, AP9566GH, AP9566GM, AP9567GH-HF, IRF9540, AP9567GM, AP9569GH-HF, AP9569GJ-HF, AP9569GM, AP9571GP-HF, AP9571GS-HF, AP9573GH-HF, 2SK2333