AP9567GJ-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9567GJ-HF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO-251
AP9567GJ-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9567GJ-HF Datasheet (PDF)
ap9567gh.pdf
AP9567GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID -22AG RoHS Compliant & Halogen-FreeSDescriptionGAP9567 series are from Advanced Power innovated design and siliconDSprocess technology to achieve
ap9567gh-hf.pdf
AP9567GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID -22AG RoHS Compliant & Halogen-FreeSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount a
ap9567gm.pdf
AP9567GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS -40V DDLow On-resistance D RDS(ON) 50m DFast Switching Characteristic ID -6A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best c
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP9466GM
History: AP9466GM
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