AP9569GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9569GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 26 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: TO-251

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AP9569GJ-HF datasheet

 ..1. Size:63K  ape
 ap9569gh-hf ap9569gj-hf.pdf pdf_icon

AP9569GJ-HF

AP9569GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -40V Fast Switching Characteristic RDS(ON) 90m RoHS Compliant & Halogen-Free ID -14A G S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for

 7.1. Size:59K  ape
 ap9569gm.pdf pdf_icon

AP9569GJ-HF

AP9569GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D Fast Switching Characteristic D RDS(ON) 90m D RoHS Compliant ID -4.2A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

 9.1. Size:99K  ape
 ap9563gh-hf ap9563gj-hf.pdf pdf_icon

AP9569GJ-HF

AP9563GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, r

 9.2. Size:93K  ape
 ap9566gm-hf.pdf pdf_icon

AP9569GJ-HF

AP9566GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 72m D Fast Switching Characteristic ID -4.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

MOSTRAR MÁS

Otros transistores... AP9565GEJ, AP9565GEM, AP9566GH, AP9566GM, AP9567GH-HF, AP9567GJ-HF, AP9567GM, AP9569GH-HF, STP75NF75, AP9569GM, AP9571GP-HF, AP9571GS-HF, AP9573GH-HF, 2SK2333, 2SK2632LS, 2SK1413, 2SK1936-01