AP9575GI-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9575GI-HF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 115 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Encapsulados: TO-220CFM
Búsqueda de reemplazo de AP9575GI-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP9575GI-HF datasheet
ap9575gi-hf.pdf
AP9575GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16A G RoHS Compliant & Halogen-Free D TO-220CFM(I) S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast swit
ap9575gi.pdf
AP9575GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 70m Fast Switching Characteristic ID -16A G D TO-220CFM(I) S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, l
ap9575gh ap9575gj.pdf
AP9575GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15A G S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suited for low voltage appl
ap9575gm-hf.pdf
AP9575GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V D D D Simple Drive Requirement RDS(ON) 90m D Fast Switching Characteristic ID -4A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
Otros transistores... 2SK2640-01MR, 2SK2771-01R, AP9575AGH-HF, AP9575AGI-HF, AP9575AGJ-HF, AP9575AGM-HF, AP9575AGS-HF, AP9575GH-HF, IRFB3607, AP9575GJ-HF, AP9575GM, AP9575GP-HF, AP9575GS-HF, AP9576GH, AP9576GJ, AP9576GM, AP9577GI
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