AP9576GH Todos los transistores

 

AP9576GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9576GH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

AP9576GH Datasheet (PDF)

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AP9576GH

AP9576GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID -14AGSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrial STO-252(H)surface mount applications and suited for low volta

 7.1. Size:95K  ape
ap9576gm-hf.pdf pdf_icon

AP9576GH

AP9576GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS -60VDDD Simple Drive Requirement RDS(ON) 90mD Fast Switching Characteristic ID -4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

 7.2. Size:69K  ape
ap9576gm.pdf pdf_icon

AP9576GH

AP9576GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLower On-resistance BVDSS -60V DDSimple Drive Requirement D RDS(ON) 90m DFast Switching Characteristic ID -4A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best

 9.1. Size:98K  ape
ap9575gh ap9575gj.pdf pdf_icon

AP9576GH

AP9575GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15AGSDescriptionGDThe TO-252 package is widely preferred for commercial-industrial STO-252(H)surface mount applications and suited for low voltage appl

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History: 24NM60G-T3B-T | AONV180A60 | WPM1488 | IPP048N12N3 | AUIRFR9024N | CEB18N5 | 2N65L-TMS4-T

 

 
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