AP9578GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9578GS

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 28 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 13 nS

Conductancia de drenaje-sustrato (Cd): 80 pF

Resistencia drenaje-fuente RDS(on): 0.16 Ohm

Empaquetado / Estuche: TO-263

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AP9578GS Datasheet (PDF)

1.1. ap9578gs.pdf Size:200K _a-power

AP9578GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Lower On-resistance BVDSS -60V Ў Simple Drive Requirement RDS(ON) 160m? Ў Fast Switching Characteristic ID -10A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-263(S) ruggedized device design,

3.1. ap9578gi-hf.pdf Size:73K _a-power

AP9578GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge D BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 160mΩ ▼ Fast Switching Characteristic ID -9A G ▼ Halogen Free & RoHS Compliant S Description AP9578 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

3.2. ap9578gp.pdf Size:196K _a-power

AP9578GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Lower On-resistance BVDSS -60V Ў Simple Drive Requirement RDS(ON) 160m? Ў Fast Switching Characteristic ID -10A G S Description The Advanced Power MOSFETs from APEC provide the designer with G D the best combination of fast switching, ruggedized device design, low S TO-

3.3. ap9578gh.pdf Size:232K _a-power

AP9578GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower On-resistance D BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 160mΩ ▼ Fast Switching Characteristic ID -10A G S Description AP9578 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lowest possible on- TO-252(H)

3.4. ap9578gm.pdf Size:180K _a-power

AP9578GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Lower On-resistance BVDSS -60V D D D Ў Simple Drive Requirement RDS(ON) 170m? D Ў Fast Switching Characteristic ID -3A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,

3.5. ap9578gh ap9578gj.pdf Size:217K _a-power

AP9578GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Lower On-resistance BVDSS -60V ▼ Simple Drive Requirement RDS(ON) 160mΩ ▼ Fast Switching Characteristic ID -10A G S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount applications and suited for low volt

3.6. ap9578gh j-hf.pdf Size:100K _a-power

AP9578GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Lower On-resistance BVDSS -60V Ў Simple Drive Requirement RDS(ON) 160m? Ў Fast Switching Characteristic ID -10A G S Description The TO-252 package is widely preferred for all commercial-industrial G D S surface mount applications and suited for low voltage applications T

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