AP9585GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9585GJ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 11.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de AP9585GJ MOSFET
AP9585GJ Datasheet (PDF)
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AP9585GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -80V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -11.2AGSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrial STO-252(H)surface mount applications and suited for low volta
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ap9585gm.pdf
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Otros transistores... AP9579GI-HF , AP9579GJ-HF , AP9579GM-HF , AP9579GP-HF , AP9579GS-HF , AP9581GP-HF , AP9581GS-HF , AP9585GH , NCEP15T14 , AP9585GM , AP9585GM-HF , AP9587GH-HF , AP9587GJ-HF , AP9591GP-HF , AP95N25W , AP95T06AGP , AP95T06BGP .
History: SL3402 | AP65WN2K3L
History: SL3402 | AP65WN2K3L
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