AP9585GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9585GJ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 11.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO-251
- Selección de transistores por parámetros
AP9585GJ Datasheet (PDF)
ap9585gh ap9585gj.pdf

AP9585GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -80V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -11.2AGSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrial STO-252(H)surface mount applications and suited for low volta
ap9585gm-hf.pdf

AP9585GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -80VDDD Lower Gate Charge RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination o
ap9585gm.pdf

AP9585GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -80VDDD Lower Gate Charge RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device
ap9581gs-hf.pdf

AP9581GS-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -80V Simple Drive Requirement RDS(ON) 15m Fast Switching Characteristic ID -95AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SI7110DN | NCEAP60ND30AG | STF34N65M5 | SI2309CDS-T1-GE3 | SI4340DDY | BSD816SN | LN2302LT1G
History: SI7110DN | NCEAP60ND30AG | STF34N65M5 | SI2309CDS-T1-GE3 | SI4340DDY | BSD816SN | LN2302LT1G



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