AP95T07AGP-HF Todos los transistores

 

AP95T07AGP-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP95T07AGP-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 75 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 170 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 150 nC

Tiempo de elevación (tr): 72 nS

Conductancia de drenaje-sustrato (Cd): 920 pF

Resistencia drenaje-fuente RDS(on): 0.0048 Ohm

Empaquetado / Estuche: TO-220

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AP95T07AGP-HF Datasheet (PDF)

1.1. ap95t07agp.pdf Size:192K _a-power

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 75V ▼ Lower On-resistance RDS(ON) 4.8mΩ ▼ RoHS Compliant & Halogen-Free ID3 170A G S Description AP95T07A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and f

1.2. ap95t07agp-hf.pdf Size:94K _a-power

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 75V Ў Lower On-resistance RDS(ON) 4.8m? Ў RoHS Compliant & Halogen-Free ID 170A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance

 3.1. ap95t07gp.pdf Size:159K _a-power

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 75V ▼ Lower On-resistance RDS(ON) 5mΩ ▼ Fast Switching Characteristic ID 80A G ▼ RoHS Compliant & Halogen-Free S Description AP95T07 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

3.2. ap95t07gp-hf.pdf Size:96K _a-power

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 75V Ў Lower On-resistance RDS(ON) 5m? Ў Fast Switching Characteristic ID 80A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

 3.3. ap95t07bgp-hf.pdf Size:57K _a-power

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 75V Ў Lower On-resistance RDS(ON) 5m? Ў RoHS Compliant & Halogen-Free ID 125A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and c

3.4. ap95t07bgp.pdf Size:149K _a-power

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ D BVDSS 75V ▼ Simple Drive Requirement ▼ ▼ ▼ RDS(ON) 5mΩ ▼ Lower On-resistance ▼ ▼ ▼ RoHS Compliant & Halogen-Free ID 125A ▼ ▼ ▼ G S Description AP95T07B series are from Advanced Power innovated design and silicon process technology to ac

 3.5. ap95t07bgs-hf.pdf Size:95K _a-power

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07BGS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 75V Ў Lower On-resistance RDS(ON) 5m? Ў RoHS Compliant & Halogen-Free ID 125A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resistance a

3.6. ap95t07gs.pdf Size:145K _a-power

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07GS RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 75V ▼ Lower On-resistance RDS(ON) 5mΩ ▼ Fast Switching Characteristic ID 80A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D S TO-263(S) ruggedized device design,

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