Справочник MOSFET. AP95T07AGP-HF

 

AP95T07AGP-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP95T07AGP-HF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 300 W
   Предельно допустимое напряжение сток-исток |Uds|: 75 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 170 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 93 nC
   Время нарастания (tr): 72 ns
   Выходная емкость (Cd): 920 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0048 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для AP95T07AGP-HF

 

 

AP95T07AGP-HF Datasheet (PDF)

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ap95t07agp-hf.pdf

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.8m RoHS Compliant & Halogen-Free ID 170AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resi

 4.1. Size:192K  ape
ap95t07agp.pdf

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.8m RoHS Compliant & Halogen-Free ID3 170AGSDescriptionAP95T07A series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and f

 7.1. Size:57K  ape
ap95t07bgp-hf.pdf

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07BGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m RoHS Compliant & Halogen-Free ID 125AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc

 7.2. Size:145K  ape
ap95t07gs.pdf

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GDS TO-263(S)ruggedized device design,

 7.3. Size:96K  ape
ap95t07gp-hf.pdf

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedize

 7.4. Size:149K  ape
ap95t07bgp.pdf

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07BGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D BVDSS 75V Simple Drive Requirement RDS(ON) 5m Lower On-resistance RoHS Compliant & Halogen-Free ID 125AGSDescriptionAP95T07B series are from Advanced Power innovated designand silicon process technology to ac

 7.5. Size:159K  ape
ap95t07gp.pdf

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP95T07 series are from Advanced Power innovated designand silicon process technology to achieve the lowest

 7.6. Size:95K  ape
ap95t07bgs-hf.pdf

AP95T07AGP-HF
AP95T07AGP-HF

AP95T07BGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m RoHS Compliant & Halogen-Free ID 125AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-Gresis

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