AP97T07GP-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP97T07GP-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 375 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 220 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 240 nS
Cossⓘ - Capacitancia de salida: 1160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET AP97T07GP-HF
AP97T07GP-HF Datasheet (PDF)
ap97t07gp-hf.pdf
AP97T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resis
ap97t07gp.pdf
AP97T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220AGSDescriptionAP97T07 series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and fast
ap97t07gw-hf.pdf
AP97T07GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistan
ap97t07gr-hf-pre.pdf
AP97T07GR-HFPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918