AP97T07GP-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP97T07GP-HF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 375 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 220 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 240 ns
Cossⓘ - Выходная емкость: 1160 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
Тип корпуса: TO-220
- подбор MOSFET транзистора по параметрам
AP97T07GP-HF Datasheet (PDF)
ap97t07gp-hf.pdf

AP97T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resis
ap97t07gp.pdf

AP97T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220AGSDescriptionAP97T07 series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and fast
ap97t07gw-hf.pdf

AP97T07GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistan
ap97t07gr-hf-pre.pdf

AP97T07GR-HFPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 3.6m RoHS Compliant & Halogen-Free ID 220AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 3N150S | WMJ38N60C2 | TPC8034-H | OSG55R070HF | AO6804A | 3N212 | IPB65R310CFD
History: 3N150S | WMJ38N60C2 | TPC8034-H | OSG55R070HF | AO6804A | 3N212 | IPB65R310CFD



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