AP98T03GW-HF Todos los transistores

 

AP98T03GW-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP98T03GW-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 78 nS
   Cossⓘ - Capacitancia de salida: 810 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO-3P
 

 Búsqueda de reemplazo de AP98T03GW-HF MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP98T03GW-HF Datasheet (PDF)

 ..1. Size:57K  ape
ap98t03gw-hf.pdf pdf_icon

AP98T03GW-HF

AP98T03GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Ultra-low On-resistance RDS(ON) 3m Fast Switching Characteristic ID 145AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg

 6.1. Size:211K  ape
ap98t03gs.pdf pdf_icon

AP98T03GW-HF

AP98T03GP/S-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAP98T03 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resistance

 6.2. Size:97K  ape
ap98t03gp ap98t03gs.pdf pdf_icon

AP98T03GW-HF

AP98T03GP/SRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-r

 6.3. Size:93K  ape
ap98t03gps-hf.pdf pdf_icon

AP98T03GW-HF

AP98T03GP/S-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-

Otros transistores... AP97T07AGP-HF , AP97T07GP-HF , AP97T07GR-HF , AP97T07GW-HF , AP9870GH-HF , AP9871GH-HF , AP98T03GP-HF , AP98T03GS-HF , IRFZ44 , AP98T06GI-HF , AP98T06GP , AP98T06GS-HF , AP98T07GP-HF , AP9918GJ , AP9920GEO , AP9922AGEO-HF , AP9922GEO-HF .

History: 2SK3569 | APM7316 | AP9468GH-HF | MDF13N50GTH | AP9960GM-HF | MDP4N60TH | MDHT4N20YURH

 

 
Back to Top

 


 
.