AP98T03GW-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP98T03GW-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 78 nS
Cossⓘ - Capacitancia de salida: 810 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Paquete / Cubierta: TO-3P
Búsqueda de reemplazo de AP98T03GW-HF MOSFET
AP98T03GW-HF Datasheet (PDF)
ap98t03gw-hf.pdf

AP98T03GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Ultra-low On-resistance RDS(ON) 3m Fast Switching Characteristic ID 145AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg
ap98t03gs.pdf

AP98T03GP/S-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAP98T03 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resistance
ap98t03gp ap98t03gs.pdf

AP98T03GP/SRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-r
ap98t03gps-hf.pdf

AP98T03GP/S-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-
Otros transistores... AP97T07AGP-HF , AP97T07GP-HF , AP97T07GR-HF , AP97T07GW-HF , AP9870GH-HF , AP9871GH-HF , AP98T03GP-HF , AP98T03GS-HF , IRFZ44 , AP98T06GI-HF , AP98T06GP , AP98T06GS-HF , AP98T07GP-HF , AP9918GJ , AP9920GEO , AP9922AGEO-HF , AP9922GEO-HF .
History: APT4025BN | QM6015B | VBMB2102M | JCS50N20ABT | AON6358 | NCEP1290AK | PJP8NA50
History: APT4025BN | QM6015B | VBMB2102M | JCS50N20ABT | AON6358 | NCEP1290AK | PJP8NA50



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