All MOSFET. AP98T03GW-HF Datasheet

 

AP98T03GW-HF Datasheet and Replacement


   Type Designator: AP98T03GW-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-3P
 

 AP98T03GW-HF substitution

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AP98T03GW-HF Datasheet (PDF)

 ..1. Size:57K  ape
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AP98T03GW-HF

AP98T03GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Ultra-low On-resistance RDS(ON) 3m Fast Switching Characteristic ID 145AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg

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ap98t03gs.pdf pdf_icon

AP98T03GW-HF

AP98T03GP/S-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAP98T03 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resistance

 6.2. Size:97K  ape
ap98t03gp ap98t03gs.pdf pdf_icon

AP98T03GW-HF

AP98T03GP/SRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-r

 6.3. Size:93K  ape
ap98t03gps-hf.pdf pdf_icon

AP98T03GW-HF

AP98T03GP/S-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.8m Fast Switching Characteristic ID 200AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-

Datasheet: AP97T07AGP-HF , AP97T07GP-HF , AP97T07GR-HF , AP97T07GW-HF , AP9870GH-HF , AP9871GH-HF , AP98T03GP-HF , AP98T03GS-HF , IRFZ44 , AP98T06GI-HF , AP98T06GP , AP98T06GS-HF , AP98T07GP-HF , AP9918GJ , AP9920GEO , AP9922AGEO-HF , AP9922GEO-HF .

History: AP9926GEO-HF | UPA2780GR

Keywords - AP98T03GW-HF MOSFET datasheet

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