AP9934GM Todos los transistores

 

AP9934GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9934GM
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.3(3.6) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 130(140) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048(0.072) Ohm
   Paquete / Cubierta: SO-8
     - Selección de transistores por parámetros

 

AP9934GM Datasheet (PDF)

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ap9934gm.pdf pdf_icon

AP9934GM

AP9934GMPb Free Plating ProductAdvanced Power 2N AND 2P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETP2GSimple Drive Requirement N-CH BVDSS 35V N2D/P2DLow On-resistance RDS(ON) 48m P1S/P2SP1GFull Bridge Application on ID 4.3A N2G N1S/N2SLCD Monitor Inverter P-CH BVDSS -35VN1D/P1DN1GSO-8RDS(ON) 72

 9.1. Size:86K  ape
ap9930gm-hf.pdf pdf_icon

AP9934GM

AP9930GM-HFHalogen-Free ProductAdvanced Power 2N AND 2P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive RequirementP2G Low On-resistance N-CH BVDSS 30VN2D/P2D Full Bridge Application on RDS(ON) 33mP1S/P2SP1GLCD Monitor Inverter ID 5.5AN2GN1S/N2S RoHS Compliant P-CH BVDSS -30VN1D/P1DN1GSO-8RDS(ON) 55mDescription ID -4.1A

 9.2. Size:73K  ape
ap9938gem-hf.pdf pdf_icon

AP9934GM

AP9938GEM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 20VD2D1 Low On-resistance RDS(ON) 18mD1 Fast Switching Performance ID 8.5AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9938 series are from Advanced Power innovated design andD1 D2silicon pr

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ap9936gm-hf.pdf pdf_icon

AP9934GM

AP9936GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET DC-DC Application BVDSS 30VD2D2D1 Dual N-channel Device RDS(ON) 50mD1 Surface Mount Package ID 5AG2S2 RoHS CompliantG1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: VN67AB | IRFR3410PBF | SVSP7N70SD2 | NCE2301E | DMN2170U | NDS9410A | FDC6302P

 

 
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