AP9936GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9936GM-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 6.4 nS
Cossⓘ - Capacitancia de salida: 145 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de AP9936GM-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP9936GM-HF datasheet
..1. Size:203K ape
ap9936gm-hf.pdf 
AP9936GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET DC-DC Application BVDSS 30V D2 D2 D1 Dual N-channel Device RDS(ON) 50m D1 Surface Mount Package ID 5A G2 S2 RoHS Compliant G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
6.1. Size:168K ape
ap9936gm.pdf
AP9936GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET DC-DC Application BVDSS 30V D2 D2 D1 Dual N-channel Device RDS(ON) 50m D1 Surface Mount Package ID 5A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description D2 D1 AP9936 series are
9.1. Size:86K ape
ap9930gm-hf.pdf
AP9930GM-HF Halogen-Free Product Advanced Power 2N AND 2P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement P2G Low On-resistance N-CH BVDSS 30V N2D/P2D Full Bridge Application on RDS(ON) 33m P1S/P2S P1G LCD Monitor Inverter ID 5.5A N2G N1S/N2S RoHS Compliant P-CH BVDSS -30V N1D/P1D N1G SO-8 RDS(ON) 55m Description ID -4.1A
9.2. Size:73K ape
ap9938gem-hf.pdf
AP9938GEM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Simple Drive Requirement BVDSS 20V D2 D1 Low On-resistance RDS(ON) 18m D1 Fast Switching Performance ID 8.5A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP9938 series are from Advanced Power innovated design and D1 D2 silicon pr
9.3. Size:177K ape
ap9938gey.pdf
AP9938GEY-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20V D1/D2 Lower on-resistance RDS(ON) 16m G2 Surface Mount Package ID 7.5A S2 RoHS Compliant & Halogen-Free G1 S1 2928-8 Description D1 D2 Advanced Power MOSFETs utilized advanced processing G1 G2 techniques to achiev
9.4. Size:96K ape
ap9932gm.pdf
AP9932GM Pb Free Plating Product Advanced Power 2N AND 2P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET P2G Simple Drive Requirement N-CH BVDSS 30V N2D/P2D Low On-resistance RDS(ON) 40m P1S/P2S P1G Full Bridge Application on ID 4.3A N2G N1S/N2S LCD Monitor Inverter P-CH BVDSS -30V N1D/P1D N1G SO-8 RDS(ON) 7
9.5. Size:144K ape
ap9938geo.pdf
AP9938GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 S2 Low on-resistance S2 BVDSS 20V D2 Capable of 1.8V Gate Drive G1 RDS(ON) 18m S1 S1 TSSOP-8 D1 Optimal DC/DC Battery Application ID3 6A Halogen Free & RoHS Compliant Product Description D1 D2 Advanced Power MOSFETs from APEC provide the designer
9.6. Size:96K ape
ap9934gm.pdf
AP9934GM Pb Free Plating Product Advanced Power 2N AND 2P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET P2G Simple Drive Requirement N-CH BVDSS 35V N2D/P2D Low On-resistance RDS(ON) 48m P1S/P2S P1G Full Bridge Application on ID 4.3A N2G N1S/N2S LCD Monitor Inverter P-CH BVDSS -35V N1D/P1D N1G SO-8 RDS(ON) 72
9.7. Size:98K ape
ap9938agey-hf.pdf
AP9938AGEY-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D1/D2 Low On-resistance RDS(ON) 16m G2 Surface Mount Package ID 7.5A S2 RoHS Compliant & Halogen-Free G1 S1 2928-8 Description D1 D2 Advanced Power MOSFETs utilized advanced processing G1 G2 techniques to achieve
9.8. Size:71K ape
ap9938geyt-hf.pdf
AP9938GEYT-HF Halogen-Free Product Advanced Power DUAL N CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1/D2 Capable of 1.8V Gate Drive BVDSS 20V Good Thermal Performance RDS(ON) 16m Fast Switching Performance ID 10A S1 RoHS Compliant & Halogen-Free G1 S2 D1/D2 G2 Description PMPAK 3x3 G1 G2 AP9938 series are from Advanced Power innovated design and
9.9. Size:120K ape
ap9930agm.pdf
AP9930AGM RoHS-compliant Product Advanced Power 2N AND 2P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement P2G Low On-resistance N-CH BVDSS 30V N2D/P2D Full Bridge Application on RDS(ON) 35m P1S/P2S P1G LCD Monitor Inverter ID 5.2A N2G N1S/N2S RoHS Compliant P-CH BVDSS -30V N1D/P1D N1G SO-8 RDS(ON) 72m Description ID -3.5A
9.10. Size:97K ape
ap9938gey-hf.pdf
AP9938GEY-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20V D1/D2 Lower on-resistance RDS(ON) 16m G2 Surface Mount Package ID 7.5A S2 RoHS Compliant & Halogen-Free G1 S1 2928-8 Description D1 D2 Advanced Power MOSFETs utilized advanced processing G1 G2 techniques to achiev
9.11. Size:170K ape
ap9938gem.pdf
AP9938GEM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Simple Drive Requirement BVDSS 20V D2 D1 Low On-resistance RDS(ON) 18m D1 Fast Switching Performance ID 8.5A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP9938 series a
9.12. Size:178K ape
ap9938agey.pdf
AP9938AGEY-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D1/D2 Low On-resistance RDS(ON) 16m G2 Surface Mount Package ID 7.5A S2 RoHS Compliant & Halogen-Free G1 S1 2928-8 Description D1 D2 AP9938A series are from Advanced Power innovated design G1 G2 and silicon proce
9.13. Size:73K ape
ap9938geo-hf.pdf
AP9938GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 S2 Low on-resistance S2 BVDSS 20V D2 Capable of 1.8V Gate Drive G1 RDS(ON) 18m S1 S1 TSSOP-8 D1 Optimal DC/DC Battery Application ID 6A Halogen Free & RoHS Compliant Product Description D1 D2 Advanced Power MOSFETs from APEC provide the designer
Otros transistores... AP9926GM-HF, AP9926GO, AP9928GEM, AP9928GEO, AP9930AGM, AP9930GM-HF, AP9932GM, AP9934GM, STP75NF75, AP9938AGEY-HF, AP9938GEM-HF, AP9938GEO-HF, AP9950AGH-HF, AP9950AGP-HF, AP9950GP, AP9952GP-HF, AP9960AGM-HF
