AP9936GM-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP9936GM-HF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 6.1 nC
Время нарастания (tr): 6.4 ns
Выходная емкость (Cd): 145 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.05 Ohm
Тип корпуса: SO-8
Аналог (замена) для AP9936GM-HF
AP9936GM-HF Datasheet (PDF)
ap9936gm-hf.pdf
AP9936GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET DC-DC Application BVDSS 30VD2D2D1 Dual N-channel Device RDS(ON) 50mD1 Surface Mount Package ID 5AG2S2 RoHS CompliantG1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
ap9936gm.pdf
AP9936GM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET DC-DC Application BVDSS 30VD2D2D1 Dual N-channel Device RDS(ON) 50mD1 Surface Mount Package ID 5AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionD2D1AP9936 series are
ap9930gm-hf.pdf
AP9930GM-HFHalogen-Free ProductAdvanced Power 2N AND 2P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive RequirementP2G Low On-resistance N-CH BVDSS 30VN2D/P2D Full Bridge Application on RDS(ON) 33mP1S/P2SP1GLCD Monitor Inverter ID 5.5AN2GN1S/N2S RoHS Compliant P-CH BVDSS -30VN1D/P1DN1GSO-8RDS(ON) 55mDescription ID -4.1A
ap9938gem-hf.pdf
AP9938GEM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 20VD2D1 Low On-resistance RDS(ON) 18mD1 Fast Switching Performance ID 8.5AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9938 series are from Advanced Power innovated design andD1 D2silicon pr
ap9938gey.pdf
AP9938GEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD1/D2 Lower on-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processingG1 G2techniques to achiev
ap9932gm.pdf
AP9932GMPb Free Plating ProductAdvanced Power 2N AND 2P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETP2GSimple Drive Requirement N-CH BVDSS 30V N2D/P2DLow On-resistance RDS(ON) 40m P1S/P2SP1GFull Bridge Application on ID 4.3A N2GN1S/N2SLCD Monitor Inverter P-CH BVDSS -30VN1D/P1DN1GSO-8RDS(ON) 7
ap9938geo.pdf
AP9938GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETG2S2 Low on-resistance S2 BVDSS 20VD2 Capable of 1.8V Gate Drive G1 RDS(ON) 18mS1S1TSSOP-8D1 Optimal DC/DC Battery Application ID3 6A Halogen Free & RoHS Compliant ProductDescriptionD1 D2Advanced Power MOSFETs from APEC provide the designer
ap9934gm.pdf
AP9934GMPb Free Plating ProductAdvanced Power 2N AND 2P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETP2GSimple Drive Requirement N-CH BVDSS 35V N2D/P2DLow On-resistance RDS(ON) 48m P1S/P2SP1GFull Bridge Application on ID 4.3A N2G N1S/N2SLCD Monitor Inverter P-CH BVDSS -35VN1D/P1DN1GSO-8RDS(ON) 72
ap9938agey-hf.pdf
AP9938AGEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD1/D2 Low On-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processingG1 G2techniques to achieve
ap9938geyt-hf.pdf
AP9938GEYT-HFHalogen-Free ProductAdvanced Power DUAL N CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1/D2 Capable of 1.8V Gate Drive BVDSS 20V Good Thermal Performance RDS(ON) 16m Fast Switching Performance ID 10AS1 RoHS Compliant & Halogen-FreeG1S2D1/D2G2Description PMPAK 3x3G1 G2AP9938 series are from Advanced Power innovated design and
ap9930agm.pdf
AP9930AGMRoHS-compliant ProductAdvanced Power 2N AND 2P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive RequirementP2G Low On-resistance N-CH BVDSS 30VN2D/P2D Full Bridge Application on RDS(ON) 35mP1S/P2SP1GLCD Monitor Inverter ID 5.2AN2GN1S/N2S RoHS Compliant P-CH BVDSS -30VN1D/P1DN1GSO-8RDS(ON) 72mDescription ID -3.5A
ap9938gey-hf.pdf
AP9938GEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD1/D2 Lower on-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processingG1 G2techniques to achiev
ap9938gem.pdf
AP9938GEM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 20VD2D1 Low On-resistance RDS(ON) 18mD1 Fast Switching Performance ID 8.5AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9938 series a
ap9938agey.pdf
AP9938AGEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD1/D2 Low On-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2AP9938A series are from Advanced Power innovated designG1 G2and silicon proce
ap9938geo-hf.pdf
AP9938GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETG2S2 Low on-resistance S2 BVDSS 20VD2 Capable of 1.8V Gate Drive G1 RDS(ON) 18mS1S1TSSOP-8D1 Optimal DC/DC Battery Application ID 6A Halogen Free & RoHS Compliant ProductDescriptionD1 D2Advanced Power MOSFETs from APEC provide the designer
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