AP9962AGJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9962AGJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO-251

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AP9962AGJ-HF datasheet

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 ap9962agh-hf ap9962agj-hf ap9962agj-hf.pdf pdf_icon

AP9962AGJ-HF

AP9962AGH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized

 6.1. Size:204K  ape
 ap9962agm-hf.pdf pdf_icon

AP9962AGJ-HF

AP9962AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 D1 Single Drive Requirement RDS(ON) 25m D1 Surface Mount Package ID 7A G2 S2 RoHS Compliant G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switchin

 6.2. Size:95K  ape
 ap9962agp-hf.pdf pdf_icon

AP9962AGJ-HF

AP9962AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 40V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 32A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 6.3. Size:163K  ape
 ap9962agd.pdf pdf_icon

AP9962AGJ-HF

AP9962AGD RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 D1 Single Drive Requirement RDS(ON) 25m D1 PDIP-8 Package ID 7A G2 S2 G1 PDIP-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi

MOSTRAR MÁS

Otros transistores... AP9952GP-HF, AP9960AGM-HF, AP9960GD, AP9960GH, AP9960GJ, AP9960GM-HF, AP9962AGD, AP9962AGH, 5N65, AP9962AGM-HF, AP9962AGP-HF, AP9962BGH-HF, AP9962GH, AP9962GJ, AP9962GMA, AP9962GM-HF, AP9963AGP-HF