AP9962BGH-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9962BGH-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 31 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 21 nC
trⓘ - Tiempo de subida: 44 nS
Cossⓘ - Capacitancia de salida: 105 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de AP9962BGH-HF MOSFET
AP9962BGH-HF Datasheet (PDF)
ap9962bgh-hf.pdf

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ap9962agm-hf.pdf

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ap9962gma.pdf

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ap9962agp-hf.pdf

AP9962AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS 40V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 32AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized
Otros transistores... AP9960GH , AP9960GJ , AP9960GM-HF , AP9962AGD , AP9962AGH , AP9962AGJ-HF , AP9962AGM-HF , AP9962AGP-HF , IRLZ44N , AP9962GH , AP9962GJ , AP9962GMA , AP9962GM-HF , AP9963AGP-HF , AP9963AGS-HF , AP9963GI-HF , AP9963GP-HF .



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