AP9962BGH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9962BGH-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 31 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 44 nS
Cossⓘ - Capacitancia de salida: 105 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de AP9962BGH-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP9962BGH-HF datasheet
8.1. Size:204K ape
ap9962agm-hf.pdf 
AP9962AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 D1 Single Drive Requirement RDS(ON) 25m D1 Surface Mount Package ID 7A G2 S2 RoHS Compliant G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switchin
8.2. Size:89K ape
ap9962gma.pdf
AP9962GMA Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET SO-8 similar area footprint and pin assignment BVDSS 40V Low Gate Charge RDS(ON) 20m D Fast Switching Speed ID 36A RoHS Compliant G S D Description The APAK-5 package is preferred for all commercial-industrial S surface mount applications and suited for low
8.3. Size:95K ape
ap9962agp-hf.pdf
AP9962AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 40V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 32A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized
8.4. Size:98K ape
ap9962gh ap9962gj.pdf
AP9962GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-resistance an
8.5. Size:210K ape
ap9962gm-hf.pdf
AP9962GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 Single Drive Requirement RDS(ON) 25m D1 D1 Surface Mount Package ID 7A G2 RoHS Compliant S2 G1 S1 SO-8 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching
8.6. Size:97K ape
ap9962agh-hf ap9962agj-hf ap9962agj-hf.pdf
AP9962AGH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized
8.7. Size:163K ape
ap9962agd.pdf
AP9962AGD RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 D1 Single Drive Requirement RDS(ON) 25m D1 PDIP-8 Package ID 7A G2 S2 G1 PDIP-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
8.8. Size:142K ape
ap9962agh.pdf
AP9962AGH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-resistance and
8.9. Size:167K ape
ap9962agm.pdf
AP9962AGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 40V D2 D2 D1 Simple Drive Requirement RDS(ON) 25m D1 Surface Mount Package ID 7A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP9962A series are fro
8.10. Size:151K ape
ap9962agp.pdf
AP9962AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 40V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 32A G RoHS Compliant & Halogen-Free S Description AP9962A series are from Advanced Power innovated
8.11. Size:205K ape
ap9962gm.pdf
AP9962GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 Single Drive Requirement RDS(ON) 25m D1 D1 Surface Mount Package ID 7A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device
Otros transistores... AP9960GH, AP9960GJ, AP9960GM-HF, AP9962AGD, AP9962AGH, AP9962AGJ-HF, AP9962AGM-HF, AP9962AGP-HF, AON6380, AP9962GH, AP9962GJ, AP9962GMA, AP9962GM-HF, AP9963AGP-HF, AP9963AGS-HF, AP9963GI-HF, AP9963GP-HF
