AP9962BGH-HF. Аналоги и основные параметры
Наименование производителя: AP9962BGH-HF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 25 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 31 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 44 ns
Cossⓘ - Выходная емкость: 105 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: TO-252
Аналог (замена) для AP9962BGH-HF
- подборⓘ MOSFET транзистора по параметрам
AP9962BGH-HF даташит
8.1. Size:204K ape
ap9962agm-hf.pdf 
AP9962AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 D1 Single Drive Requirement RDS(ON) 25m D1 Surface Mount Package ID 7A G2 S2 RoHS Compliant G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switchin
8.2. Size:89K ape
ap9962gma.pdf 
AP9962GMA Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET SO-8 similar area footprint and pin assignment BVDSS 40V Low Gate Charge RDS(ON) 20m D Fast Switching Speed ID 36A RoHS Compliant G S D Description The APAK-5 package is preferred for all commercial-industrial S surface mount applications and suited for low
8.3. Size:95K ape
ap9962agp-hf.pdf 
AP9962AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 40V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 32A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized
8.4. Size:98K ape
ap9962gh ap9962gj.pdf 
AP9962GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-resistance an
8.5. Size:210K ape
ap9962gm-hf.pdf 
AP9962GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 Single Drive Requirement RDS(ON) 25m D1 D1 Surface Mount Package ID 7A G2 RoHS Compliant S2 G1 S1 SO-8 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching
8.6. Size:97K ape
ap9962agh-hf ap9962agj-hf ap9962agj-hf.pdf 
AP9962AGH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized
8.7. Size:163K ape
ap9962agd.pdf 
AP9962AGD RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 D1 Single Drive Requirement RDS(ON) 25m D1 PDIP-8 Package ID 7A G2 S2 G1 PDIP-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
8.8. Size:142K ape
ap9962agh.pdf 
AP9962AGH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-resistance and
8.9. Size:167K ape
ap9962agm.pdf 
AP9962AGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 40V D2 D2 D1 Simple Drive Requirement RDS(ON) 25m D1 Surface Mount Package ID 7A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP9962A series are fro
8.10. Size:151K ape
ap9962agp.pdf 
AP9962AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 40V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 32A G RoHS Compliant & Halogen-Free S Description AP9962A series are from Advanced Power innovated
8.11. Size:205K ape
ap9962gm.pdf 
AP9962GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 Single Drive Requirement RDS(ON) 25m D1 D1 Surface Mount Package ID 7A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device
Другие IGBT... AP9960GH, AP9960GJ, AP9960GM-HF, AP9962AGD, AP9962AGH, AP9962AGJ-HF, AP9962AGM-HF, AP9962AGP-HF, AON6380, AP9962GH, AP9962GJ, AP9962GMA, AP9962GM-HF, AP9963AGP-HF, AP9963AGS-HF, AP9963GI-HF, AP9963GP-HF
