AP9962GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9962GJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO-251

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AP9962GJ datasheet

 ..1. Size:98K  ape
 ap9962gh ap9962gj.pdf pdf_icon

AP9962GJ

AP9962GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-resistance an

 7.1. Size:89K  ape
 ap9962gma.pdf pdf_icon

AP9962GJ

AP9962GMA Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET SO-8 similar area footprint and pin assignment BVDSS 40V Low Gate Charge RDS(ON) 20m D Fast Switching Speed ID 36A RoHS Compliant G S D Description The APAK-5 package is preferred for all commercial-industrial S surface mount applications and suited for low

 7.2. Size:210K  ape
 ap9962gm-hf.pdf pdf_icon

AP9962GJ

AP9962GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 Single Drive Requirement RDS(ON) 25m D1 D1 Surface Mount Package ID 7A G2 RoHS Compliant S2 G1 S1 SO-8 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching

 7.3. Size:205K  ape
 ap9962gm.pdf pdf_icon

AP9962GJ

AP9962GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 Single Drive Requirement RDS(ON) 25m D1 D1 Surface Mount Package ID 7A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device

MOSTRAR MÁS

Otros transistores... AP9960GM-HF, AP9962AGD, AP9962AGH, AP9962AGJ-HF, AP9962AGM-HF, AP9962AGP-HF, AP9962BGH-HF, AP9962GH, CS150N03A8, AP9962GMA, AP9962GM-HF, AP9963AGP-HF, AP9963AGS-HF, AP9963GI-HF, AP9963GP-HF, AP9963GS-HF, AP9964GM