AP9962GJ Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP9962GJ
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 34.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 32 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 180 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: TO-251
- подбор MOSFET транзистора по параметрам
AP9962GJ Datasheet (PDF)
ap9962gh ap9962gj.pdf

AP9962GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-resistance an
ap9962gma.pdf

AP9962GMAPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET SO-8 similar area footprint and pin assignment BVDSS 40V Low Gate Charge RDS(ON) 20mD Fast Switching Speed ID 36A RoHS CompliantGSDDescriptionThe APAK-5 package is preferred for all commercial-industrialSsurface mount applications and suited for low
ap9962gm-hf.pdf

AP9962GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD2D2 Single Drive Requirement RDS(ON) 25mD1D1 Surface Mount Package ID 7AG2 RoHS CompliantS2G1S1SO-8DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching
ap9962gm.pdf

AP9962GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD2D2 Single Drive Requirement RDS(ON) 25mD1D1 Surface Mount Package ID 7AG2S2G1S1SO-8DescriptionD2Advanced Power MOSFETs from APEC provide theD1designer with the best combination of fast switching,ruggedized device
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: GSM6530S | HCU60R580 | AMD530C | RFP50N05L | IXFN32N120P | AM2306 | SVF10N60S
History: GSM6530S | HCU60R580 | AMD530C | RFP50N05L | IXFN32N120P | AM2306 | SVF10N60S



Список транзисторов
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