AP9964GM Todos los transistores

 

AP9964GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9964GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: SO-8
     - Selección de transistores por parámetros

 

AP9964GM Datasheet (PDF)

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ap9964gm.pdf pdf_icon

AP9964GM

AP9964GMRoHS-compliant ProductAdvanced Power Dual N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 40VD2D2 Simple Drive Requirement RDS(ON) 16mD1D1 Dual N MOSFET Package ID 9AG2S2G1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,ruggedized de

 9.1. Size:95K  ape
ap9963gp-hf.pdf pdf_icon

AP9964GM

AP9963GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 40V Low Gate Charge RDS(ON) 4m Fast Switching Characteristic ID 160AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugge

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ap9967gh-hf.pdf pdf_icon

AP9964GM

AP9967GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID 33AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

 9.3. Size:204K  ape
ap9962agm-hf.pdf pdf_icon

AP9964GM

AP9962AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD2D2D1 Single Drive Requirement RDS(ON) 25mD1 Surface Mount Package ID 7AG2S2 RoHS CompliantG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switchin

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