AP9965GEM Todos los transistores

 

AP9965GEM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9965GEM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 6.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SO-8
     - Selección de transistores por parámetros

 

AP9965GEM Datasheet (PDF)

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ap9965gem.pdf pdf_icon

AP9965GEM

AP9965GEMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 40VD2D2 Simple Drive Requirement RDS(ON) 28mD1D1 Dual N MOSFET Package ID 6.7AG2 RoHS CompliantS2G1SO-8S1DescriptionD1 D2The Advanced Power MOSFETs from APEC provide theG1 G2designer with the best combination of f

 6.1. Size:134K  ape
ap9965geh ap9965gej.pdf pdf_icon

AP9965GEM

AP9965GEH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 40VD Simple Drive Requirement G RDS(ON) 28m Fast Switching Characteristic ID 27ASDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H)ruggedized device de

 7.1. Size:60K  ape
ap9965gyt-hf.pdf pdf_icon

AP9965GEM

AP9965GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 40VD Small Size & Lower Profile RDS(ON) 21mG RoHS Compliant & Halogen-Free ID 10ASDDDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design

 9.1. Size:95K  ape
ap9963gp-hf.pdf pdf_icon

AP9965GEM

AP9963GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 40V Low Gate Charge RDS(ON) 4m Fast Switching Characteristic ID 160AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugge

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IXTH24N45MB | FRS240H | FQD4N20LTM | RUH1H139R-A | FQD10N20CTF | SVS20N60FD2 | KI2312DS

 

 
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