AP9970AGP-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9970AGP-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 333 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 130 nS
   Cossⓘ - Capacitancia de salida: 1150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET AP9970AGP-HF

AP9970AGP-HF Datasheet (PDF)

..1. Size:93K ape
ap9970agp-hf.pdf

AP9970AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3m RoHS Compliant & Halogen-Free ID 250AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

5.1. Size:149K ape
ap9970agp.pdf

AP9970AGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3m RoHS Compliant & Halogen-Free ID 235AGSDescriptionAP9970A series are from Advanced Power innovated designand silicon process technology to achiev

8.1. Size:94K ape
ap9970gp-hf.pdf

AP9970GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 240AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist

8.2. Size:92K ape
ap9970gi-hf.pdf

AP9970GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 100AGSDescriptionAP9970 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-Gresistance and fa

8.3. Size:136K ape
ap9970gk.pdf

AP9970GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 50mS Fast Switching Characteristic ID 5.8AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switch

8.4. Size:93K ape
ap9970gw-hf.pdf

AP9970GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 240AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc

8.5. Size:58K ape
ap9970gk-hf.pdf

8.6. Size:211K ape
ap9970gw.pdf

AP9970GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID3 240AGSDescriptionAP9970 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resistance and fast

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